top of page
[PDF Files are linked]
See Google Scholar for updated publications
2024
(C5) Rafid Hassan Palash, Toiyob Hossain, Bejoy Sikder, Qingyun Xie, Victor Moroz, Tomás Palacios, and Nadim Chowdhury. "Performance Optimization of GaN based Optically Triggered Transistors" To Appear in IEEE IEDM 2024
(J9) Bejoy Sikder*, Toiyob Hossain*, Qingyun Xie, John Niroula, Nitul S. Rajput, Koon Hoo Teo, Hiroshi Amano, Tomás Palacios, and Nadim Chowdhury. "Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure." Applied Physics Letters 124, no. 24 (2024).
(C4) Toiyob Hossain, Bejoy Sikder, Md Tasnim Azad, Qingyun Xie, Mengyang Yuan, Eiji Yagyu, Koon Hoo Teo, Tomás Palacios, and Nadim Chowdhury. "Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity." In 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), pp. 1-3. IEEE, 2024.
(J8) John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar, Sheikh Ifatur Rahman, Shisong Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K. Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios"High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C". Appl. Phys. Lett. 13 May 2024; 124 (20): 202103.
(J7) Qingyun Xie, John Niroula, Nitul S. Rajput, Mengyang Yuan, Shisong Luo, Kai Fu, Mohamed Fadil Isamotu, Rafid Hassan Palash, Bejoy Sikder, Savannah R. Eisner, Harshad Surdi, Aidan J. Belanger, Patrick K. Darmawi-Iskandar, Zlatan Aksamija, Robert J. Nemanich, Stephen M. Goodnick, Debbie G. Senesky, Gary W. Hunter, Nadim Chowdhury, Yuji Zhao, Tomás Palacios "Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments" Appl. Phys. Lett. 22 April 2024; 124 (17): 172104.
2023
(J6) Md Tasnim Azad*, Toiyob Hossain*, Bejoy Sikder, Qingyun Xie, Mengyang Yuan, Eiji Yagyu, Koon Hoo Teo, Tomás Palacios, and Nadim Chowdhury. "AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity." IEEE Transactions on Electron Devices. 70 (11), 5570 - 5576
(C3) Qingyun Xie,Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo et al. 2023. "Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C." 2023 IEEE Symposium on VLSI Technology and Circuits.
(J6) Mengyang Yuan, John Niroula, Qingyun Xie, Nitul S. Rajput, Kai Fu, Shisong Luo, Sagar Kumar Das et al. "Enhancement-mode GaN transistor technology for harsh environment operation.""Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation." IEEE Electron Device Letters, 44 (7).
(J5) Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, James A. Greer, Nitul S. Rajput, Nadim Chowdhury, and Tomás Palacios. "Highly scaled GaN complementary technology on a silicon substrate" IEEE Transactions on Electron Devices 70, no. 4 (2023): 2121-2128.
2022
(C2) Qingyun Xie, Mengyang Yuan, John Niroula, James A. Greer, Nitul S. Rajput, Nadim Chowdhury, and Tomas Palacios. "Highly-scaled self-aligned GaN complementary technology on a GaN-on-Si platform." In 2022 International Electron Devices Meeting (IEDM), pp. 35-3. IEEE, 2022.
(C1) Mengyang Yuan, Xie, Qingyun, Niroula, John, Isamotu, Mohamed Fadil, Rajput, Nitul S. et al. 2022. "High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology." 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
(J4) Mengyang Yuan , Qingyun Xie, John Niroula, Nadim Chowdhury and Tomas Palacios, 2022. "GaN Memory Operational at 300 °C." IEEE Electron Device Letters
(J3) Yuan, Mengyang, Qingyun Xie, Kai Fu, Toiyob Hossain, John Niroula, James A. Greer, Nadim Chowdhury, Yuji Zhao, and Tomás Palacios "GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform." IEEE Electron Device Letters, 43(11)
(J2) Nadim Chowdhury, Qingyun Xie and Tomas Palacios. 2022. "Tungsten-Gated GaN/ AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si." IEEE Electron Device Letters, 43 (4).
(J1) Nadim Chowdhury , Qingyun Xie, and Tomás Palacios. "Self-Aligned E-Mode GaN p-Channel FinFET With ION> 100 mA/mm and ION/IOFF> 10⁷." IEEE Electron Device Letters 43, no. 3 (2022): 358-361.
bottom of page